A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications

	A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications
	Du, LL; Luo, X; Wen, ZW; Zhang, JP; Sun, L; Lv, WL; Li, Y; Zhao, FY; Zhong, JK; Ren, Q
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2015-10-14
卷号	48 期号:40
关键词	fullerene n-channel organic field-effect transistor interfacial modifications gap state time stability
ISSN号	0022-3727
通讯作者	Du, LL (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, South Tianshui Rd 222, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000362006400010
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181367]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Du, LL,Luo, X,Wen, ZW,et al. A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(40).
APA	Du, LL.,Luo, X.,Wen, ZW.,Zhang, JP.,Sun, L.,...&Peng, YQ.(2015).A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48(40).
MLA	Du, LL,et al."A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.40(2015).