Raman studies of electrostatic doping of a thin single-walled carbon nanotube bundle

	Raman studies of electrostatic doping of a thin single-walled carbon nanotube bundle
	Gao, P.Q.; Zhang, Q.; Yuan, S.N.; Peng, N.; He, D.Y.
刊名	International Journal of Nanoscience
	2010-08
卷号	9 期号:4 页码:277-281
关键词	Electron phonon scattering Excitation lasers Gate voltages Higher frequencies In-situ Kohn anomalies Line shape LO phonons Negative gate voltages Photon energy Raman modes Raman spectra Raman studies Single-walled carbon nanotube bundle
ISSN号	0219581X
通讯作者	Zhang, Q. (eqzhang@ntu.edu.sg)
学科主题	Electricity: Basic Concepts and Phenomena;Semiconductor Devices and Integrated Circuits;Light/Optics;Nanotechnology;
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178088]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Gao, P.Q.,Zhang, Q.,Yuan, S.N.,et al. Raman studies of electrostatic doping of a thin single-walled carbon nanotube bundle[J]. International Journal of Nanoscience,2010,9(4):277-281.
APA	Gao, P.Q.,Zhang, Q.,Yuan, S.N.,Peng, N.,&He, D.Y..(2010).Raman studies of electrostatic doping of a thin single-walled carbon nanotube bundle.International Journal of Nanoscience,9(4),277-281.
MLA	Gao, P.Q.,et al."Raman studies of electrostatic doping of a thin single-walled carbon nanotube bundle".International Journal of Nanoscience 9.4(2010):277-281.