Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer

	Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer
	Chen, D; Zhang, M; Xue, ZY; Wang, G; Guo, QL; Mu, ZQ; Sun, GD; Wei, X; Liu, S
刊名	APPLIED PHYSICS EXPRESS
	2014-11
卷号	7 期号:11 页码:-
ISSN号	1882-0778
通讯作者	Wei, X (reprint author), Chinese Acad Sci, Inst Microsystem & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000346119500007
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/126650]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Chen, D,Zhang, M,Xue, ZY,et al. Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer[J]. APPLIED PHYSICS EXPRESS,2014,7(11):-.
APA	Chen, D.,Zhang, M.,Xue, ZY.,Wang, G.,Guo, QL.,...&Liu, S.(2014).Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer.APPLIED PHYSICS EXPRESS,7(11),-.
MLA	Chen, D,et al."Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer".APPLIED PHYSICS EXPRESS 7.11(2014):-.