Improvements on high voltage performance of power static induction transistors

	Improvements on high voltage performance of power static induction transistors
	Wang YS(王永顺); Li HR(李海蓉); Wang ZT(王紫婷); Li SY(李思渊)
刊名	半导体学报/Journal of Semiconductors
	2009-10-15
卷号	30 期号:10 页码:38-42
关键词	static induction transistor parasitic effect breakdown voltage deep trench
ISSN号	16744926
其他题名	Improvements on high voltage performance of power static induction transistors
通讯作者	Wang, Y. (wangysh@mail.lzjtu.cn)
学科主题	701.1 Electricity: Basic Concepts and Phenomena;714.2 Semiconductor Devices and Integrated Circuits
语种	英语
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/107707]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang YS,Li HR,Wang ZT,et al. Improvements on high voltage performance of power static induction transistors[J]. 半导体学报/Journal of Semiconductors,2009,30(10):38-42.
APA	王永顺,李海蓉,王紫婷,&李思渊.(2009).Improvements on high voltage performance of power static induction transistors.半导体学报/Journal of Semiconductors,30(10),38-42.
MLA	王永顺,et al."Improvements on high voltage performance of power static induction transistors".半导体学报/Journal of Semiconductors 30.10(2009):38-42.