Electric field control of anisotropy and magnetization switching in CoFe and CoNi thin films for magnetoelectric memory devices

	Electric field control of anisotropy and magnetization switching in CoFe and CoNi thin films for magnetoelectric memory devices
	Jin, TL; Hao, L; Cao, JW; Liu, MF; Dang, HG; Wang, Y; Wu, DP; Bai, JM; Wei, FL
刊名	APPLIED PHYSICS EXPRESS
	2014-04
卷号	7 期号:4 页码:-
ISSN号	1882-0778
通讯作者	Cao, JW (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000336118100015
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/106598]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Jin, TL,Hao, L,Cao, JW,et al. Electric field control of anisotropy and magnetization switching in CoFe and CoNi thin films for magnetoelectric memory devices[J]. APPLIED PHYSICS EXPRESS,2014,7(4):-.
APA	Jin, TL.,Hao, L.,Cao, JW.,Liu, MF.,Dang, HG.,...&Wei, FL.(2014).Electric field control of anisotropy and magnetization switching in CoFe and CoNi thin films for magnetoelectric memory devices.APPLIED PHYSICS EXPRESS,7(4),-.
MLA	Jin, TL,et al."Electric field control of anisotropy and magnetization switching in CoFe and CoNi thin films for magnetoelectric memory devices".APPLIED PHYSICS EXPRESS 7.4(2014):-.