The effects of threading dislocations and tensile strain in Ge/Si photodetector

	The effects of threading dislocations and tensile strain in Ge/Si photodetector
	Yang, JH; Wei, Y; Cai, XY; Ran, JZ
刊名	MICROELECTRONICS INTERNATIONAL
	2010
卷号	27 期号:2 页码:113-116
关键词	Simulation Optoelectronic devices Tensile loading Signal processing
ISSN号	1356-5362
通讯作者	Wei, Y (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Engineering ; Materials Science
语种	英语
WOS记录号	WOS:000279099900008
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105008]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Yang, JH,Wei, Y,Cai, XY,et al. The effects of threading dislocations and tensile strain in Ge/Si photodetector[J]. MICROELECTRONICS INTERNATIONAL,2010,27(2):113-116.
APA	Yang, JH,Wei, Y,Cai, XY,&Ran, JZ.(2010).The effects of threading dislocations and tensile strain in Ge/Si photodetector.MICROELECTRONICS INTERNATIONAL,27(2),113-116.
MLA	Yang, JH,et al."The effects of threading dislocations and tensile strain in Ge/Si photodetector".MICROELECTRONICS INTERNATIONAL 27.2(2010):113-116.