Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors

	Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors
刊名	CHINESE PHYSICS B
	2008-01
卷号	17 期号:1 页码:281-285
关键词	pentacene OFETs MS XRD AFM
ISSN号	1674-1056
通讯作者	Tao, CL (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000253960400049
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/104429]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	. Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors[J]. CHINESE PHYSICS B,2008,17(1):281-285.
APA	(2008).Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors.CHINESE PHYSICS B,17(1),281-285.
MLA	"Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors".CHINESE PHYSICS B 17.1(2008):281-285.