Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition

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	Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition
	Feng, QL; Mao, NN; Wu, JX; Xu, H; Wang, CM; Zhang, J; Xie, LM
刊名	ACS NANO
	2015-07
卷号	9 期号:7 页码:7450-7455
关键词	physical vapor deposition MoS2(1-x)Se2x alloy morphology tunable band gap Raman spectrum
ISSN号	1936-0851
其他题名	Growth of MoS2(1- x)Se2 x (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition
通讯作者	Zhang, J (reprint author), Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China.
学科主题	Chemistry; Science & Technology - Other Topics; Materials Science
语种	英语
WOS记录号	WOS:000358823200082
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/180102]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	Feng, QL,Mao, NN,Wu, JX,et al. Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition[J]. ACS NANO,2015,9(7):7450-7455.
APA	Feng, QL.,Mao, NN.,Wu, JX.,Xu, H.,Wang, CM.,...&Xie, LM.(2015).Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.ACS NANO,9(7),7450-7455.
MLA	Feng, QL,et al."Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition".ACS NANO 9.7(2015):7450-7455.