Reaction mechanism of atomic layer deposition of Al on the Si(100) surface: A density functional theory study | |
Dong, Mao Jin; Fang, Ran; Xiong, Yu Qing; Wang, Duo Shu; Wang, Ji Zhou; Li, Chen; Zhang, Ling | |
刊名 | Advanced Materials Research
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2014 | |
卷号 | 941-944页码:1283-1287 |
关键词 | Activation barriers Adsorption energies Chemical adsorption Density functional theory studies Endothermic reactions Process mechanisms Reaction mechanism Trimethyl aluminums |
ISSN号 | 10226680 |
学科主题 | Aluminum;Single Element Semiconducting Materials;Physical Chemistry;Chemical Reactions;Chemical Operations;Probability Theory |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.lzu.edu.cn/handle/262010/177915] ![]() |
专题 | 化学化工学院_期刊论文 |
推荐引用方式 GB/T 7714 | Dong, Mao Jin,Fang, Ran,Xiong, Yu Qing,et al. Reaction mechanism of atomic layer deposition of Al on the Si(100) surface: A density functional theory study[J]. Advanced Materials Research,2014,941-944:1283-1287. |
APA | Dong, Mao Jin.,Fang, Ran.,Xiong, Yu Qing.,Wang, Duo Shu.,Wang, Ji Zhou.,...&Zhang, Ling.(2014).Reaction mechanism of atomic layer deposition of Al on the Si(100) surface: A density functional theory study.Advanced Materials Research,941-944,1283-1287. |
MLA | Dong, Mao Jin,et al."Reaction mechanism of atomic layer deposition of Al on the Si(100) surface: A density functional theory study".Advanced Materials Research 941-944(2014):1283-1287. |
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