Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition | |
刊名 | APPLIED SURFACE SCIENCE |
2011-04-15 | |
卷号 | 257期号:13 |
关键词 | Pb1-xSnxSe Gold substrate EC-ALD UPD Photoelectric switch |
ISSN号 | 0169-4332 |
通讯作者 | Wang, CM (reprint author), Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China. |
学科主题 | Chemistry ; Materials Science ; Physics |
资助信息 | National Natural Science Foundation of China [51072073, 20775030] |
语种 | 英语 |
WOS记录号 | WOS:000288205800056 |
内容类型 | 期刊论文 |
源URL | [http://202.201.7.4:8080/handle/262010/76014] |
专题 | 化学化工学院_期刊论文 |
推荐引用方式 GB/T 7714 | . Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition[J]. APPLIED SURFACE SCIENCE,2011,257(13). |
APA | (2011).Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition.APPLIED SURFACE SCIENCE,257(13). |
MLA | "Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition".APPLIED SURFACE SCIENCE 257.13(2011). |
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