Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

	Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum
	Lin J ; Ma DG
刊名	journal of applied physics
	2008
卷号	103 期号:12 页码:文献编号：124505
关键词	FILMS CONDUCTANCE
ISSN号	0021-8979
通讯作者	lin j
中文摘要	negative differential resistance (ndr) and memory phenomenon have been realized in current-voltage (i-v) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. the i-v curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) ndr region, and (iii) monotonic region. the bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. the bistable nature can be reinstated by applying a suitable negative voltage.
收录类别	SCI
语种	英语
WOS记录号	WOS:000257284100108
公开日期	2010-04-14
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/10715]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Lin J,Ma DG. Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum[J]. journal of applied physics,2008,103(12):文献编号：124505.
APA	Lin J,&Ma DG.(2008).Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum.journal of applied physics,103(12),文献编号：124505.
MLA	Lin J,et al."Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum".journal of applied physics 103.12(2008):文献编号：124505.