Pt(S)[n(100)&times;(110)]表面Cu欠电位沉积

CORC > 厦门大学 > 2012年第18卷

	Pt(S)[n(100)×(110)]表面Cu欠电位沉积; Underpotential Deposition of Copper on Pt(S)[n(100)x(110)] Stepped Surfaces
	RubénGisbert ; VíctorCliment ; EnriqueHerrero ; Juan M.Feliu ; Rubén Gisbert ; Víctor Climent ; Enrique Herrero
刊名	http://electrochem.xmu.edu.cn/CN/abstract/abstract9918.shtml
	2012-12-03
关键词	Pt单晶电极 Cu 欠电位沉积台阶修饰 Pt single crystal electrodes copper underpotential deposition step decoration
英文摘要	本文研究了Cu在Pt (100)台阶面和(110)单原子台阶的欠电位沉积. 发现若不考虑阴离子吸附，初始阶段Cu在台阶面和台阶处的电沉积同时进行. 在电沉积满单层的伏安曲线上，可以观察到若干峰. 通过对峰电荷与台阶密度关系的分析，可认为这些峰分别对应于不同的沉积位点. 较正电位的峰对应于Cu在台阶面上的电沉积，而在台阶处Cu的电沉积则因溶液中的阴离子而具有不同的伏安性质. 此外，还发现Pt电极表面的Cu沉积电荷转移数接近2e，且沉积初始阶段阴离子覆盖度不变.; The underpotential deposition of Cu on platinum stepped surfaces composed of (100) terraces and (110) monoatomic steps has been studied in different acidic solutions. It has been found that the initial stage of copper deposition on the surface takes place simultaneously on terrace and step sites, irrespective of the nature of the adsorbing anion. During the voltammetric deposition of a full monolayer, several peaks can be observed. The analysis of the dependence of the peak charge with the step density allows assigning the different peaks to different deposition sites. The peak appearing at most positive potentials corresponds to the deposition of Cu on the terrace sites, whereas deposition on the step sites gives rise to different voltammetric contributions depending on the anion present in solution. Additionally, it has been found that the charge transferred upon Cu deposition is very close to 2e and that the anion coverage does not change during this process from that initially present on the platinum substrate.; This work has been financially supported by the MICINN (Spain) (project CTQ2010-16271) and Generalitat Valenciana (project PROMETEO/2009/045, -FEDER).; This work has been financially supported by the MICINN (Spain) (project CTQ2010-16271) and Generalitat Valenciana (project PROMETEO/2009/045, -FEDER).; 作者联系地址：阿利坎特大学电化学研究所，西班牙阿利坎特E-03080; Author's Address: Instituto de Electroquímica, Universidad de Alicante, Ap. 99, E-03080 Alicante, Spain; 通讯作者E-mail：herrero@ua.es, juan.feliu@ua.es
语种	中文
出版者	厦门大学《电化学》编辑部
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/58525]
专题	2012年第18卷
推荐引用方式 GB/T 7714	RubénGisbert,VíctorCliment,EnriqueHerrero,等. Pt(S)[n(100)×(110)]表面Cu欠电位沉积, Underpotential Deposition of Copper on Pt(S)[n(100)x(110)] Stepped Surfaces[J]. http://electrochem.xmu.edu.cn/CN/abstract/abstract9918.shtml,2012.
APA	RubénGisbert.,VíctorCliment.,EnriqueHerrero.,Juan M.Feliu.,Rubén Gisbert.,...&Enrique Herrero.(2012).Pt(S)[n(100)×(110)]表面Cu欠电位沉积.http://electrochem.xmu.edu.cn/CN/abstract/abstract9918.shtml.
MLA	RubénGisbert,et al."Pt(S)[n(100)×(110)]表面Cu欠电位沉积".http://electrochem.xmu.edu.cn/CN/abstract/abstract9918.shtml (2012).