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	The resistance of micro-fabricated hollow wire at Giga-hertz range
	Feng, Yongjian ; Huang, Zhilin ; Yi, Longfa ; Feng YJ(冯勇建)
	2012
关键词	Electric resistance Magnetic fields Manufacture
英文摘要	Conference Name:2010 International Conference on Manufacturing Science and Materials Engineering, ICMSME 2011. Conference Address: Shanghai, China. Time:October 14, 2011 - October 15, 2011.; In this paper we investigate the resistance of micro hollow wire at Giga-hertz range. In order to get the optimum method, deduction in resistance can be achieved using hollow wire with optimum wall thickness. In the analysis the H field phase in the non-hollow wire changes periodically versus r with a period two times optimum wall thickness. More interesting thing is that the resistance of interconnect can be optimized by using hollow wire with optimum wall thickness. The optimum wall thickness is proportional to skin depth. The phase abrupt change point of H field has important relationship with the optimum wall thickness. Theoretical analysis and calculation indicate that the cylindrical hollow wire can achieve 8% resistance deduction. Similar results for rectangular hollow wire are also got using FEA commercial software. 漏 (2012) Trans Tech Publications, Switzerland.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/AMR.443-444.779
出版者	Trans Tech Publications
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86209]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Feng, Yongjian,Huang, Zhilin,Yi, Longfa,et al. The resistance of micro-fabricated hollow wire at Giga-hertz range. 2012-01-01.

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