Fabrication of silicon piezoresistive pressure sensor using a reliable wet etching process | |
Xu, Huiming ; Zhang, H ; Deng, Zhiqia ; San, Haishen ; Yu, Yuxi ; San HS(伞海生) ; Yu YX(余煜玺) | |
2013 | |
关键词 | Fabrication Fixtures (tooling) Pressure sensors Silicon Silicon wafers Wet etching |
英文摘要 | Conference Name:8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013. Conference Address: Suzhou, China. Time:April 7, 2013 - April 10, 2013.; Institute of Electrical and Electronics Engineers (IEEE); IEEE Nanotechnology Council (NTC); Peking University; Soochow University; Chinese Academy of Sciences; Silicon-based piezoresistive pressure sensors are generally fabricated as a piezo-sensitive diaphragm by using MEMS technology and SOI wafer. Lots of innovations and improvements have been made for silicon pressure sensor to increase its performance and reliability. It is found that the quality of Si-Si bonding will directly affect the performing of SOI substrate removing processes. The main problem is that the etching liquid infiltrate into bonding interface from the defect position of bonding wafer edge, resulting in the damage and corrosion of bonding wafer. To solve this problem, the paper presents an etching fixture design for effectively protecting the bonding wafer edge. Experimentally, a SOI-Si bonding wafer with poor quality in bonding edge was used to fabricate the piezoresistive pressure sensors by using the etching fixture. The experimental results show the use of etching fixture did not damage the bonding wafer and made a nice removal of SOI substrate. The fabricated pressure sensors wafers are also presented. ? 2013 IEEE. |
语种 | 英语 |
出处 | http://dx.doi.org/10.1109/NEMS.2013.6559763 |
出版者 | IEEE Computer Society |
内容类型 | 其他 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/86154] |
专题 | 物理技术-会议论文 |
推荐引用方式 GB/T 7714 | Xu, Huiming,Zhang, H,Deng, Zhiqia,et al. Fabrication of silicon piezoresistive pressure sensor using a reliable wet etching process. 2013-01-01. |
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