Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices

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	Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices
	Lin, Wei ; Jiang, Wei ; Gao, Na ; Cai, Duanjun ; Li, Shuping ; Kang, Junyong ; Cai DJ(蔡端俊) ; Li SP(李书平) ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1002/lpor.201200118
	2013
关键词	LIGHT-EMITTING-DIODES CHEMICAL-VAPOR-DEPOSITION TOTAL-ENERGY CALCULATIONS WAVE BASIS-SET QUANTUM-WELLS EXTRACTION EFFICIENCY PIEZOELECTRIC FIELDS BAND PARAMETERS SEMICONDUCTORS GAN
英文摘要	973 program [2012CB619301, 2011CB925600]; "863" program [2011AA03A111]; National Natural Science Foundation of China [61106008, 11204254, 61204101, 90921002]; FRFCU [2012121011, 2011121042]; Natural Science Foundations of Fujian Province [2010J01343, 2012J01024]; fundamental research funds for the central universities [2011121042]; Symmetric anisotropy in wurtzite semiconductors, e.g., AlGaN, has led to the significant optical anisotropy that is rather difficult to resolve. Here, a novel scheme for achieving optical isotropization in Al-rich AlGaN through the introduction of additional asymmetric elements is demonstrated to compensate the native asymmetry. Asymmetric modulation of alloy composition and periodicity of (GaN)m/(AlN)n superlatices was proposed with first-principles simulations. Results showed that the compensation for the c-axial symmetry with the asymmetric ultrathin (GaN)m/(AlN)n superlatices (m 2) could well achieve the equivalence of the ordinary and extraordinary imaginary dielectric functions epsilon 2 at the band edge. Measurement with spectroscopic ellipsometry for this (GaN)m/(AlN)n superlatice insertion in AlGaN host confirmed the theoretical predictions of the optical isotropization. This method can be transferred to other semiconductors in anisotropic structure and with troubles of optical anisotropy.
语种	英语
出版者	WILEY-V C H VERLAG GMBH
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91877]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Lin, Wei,Jiang, Wei,Gao, Na,et al. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices[J]. http://dx.doi.org/10.1002/lpor.201200118,2013.
APA	Lin, Wei.,Jiang, Wei.,Gao, Na.,Cai, Duanjun.,Li, Shuping.,...&康俊勇.(2013).Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices.http://dx.doi.org/10.1002/lpor.201200118.
MLA	Lin, Wei,et al."Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices".http://dx.doi.org/10.1002/lpor.201200118 (2013).