Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

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	Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes
	Chen, M. ; Zhang, B. P. ; Cai, L. E. ; Zhang, J. Y. ; Ying, L. Y. ; Lv, X. Q. ; Zhang BP(张保平)
刊名	http://dx.doi.org/10.1109/JPHOT.2013.2274768
	2013
关键词	INTERNAL QUANTUM EFFICIENCY EXTRACTION EFFICIENCY MICROSPHERE ARRAYS NITRIDE FABRICATION
英文摘要	National Natural Science Foundation of China [91023048, 61106044, 61274052]; Doctoral Program Foundation of Institutions of Higher Education of China [20110121110029]; An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaN-based green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that of conventional LEDs on sapphire. The intrinsic physical mechanism of the auto-split LLO technique is studied by a Frank-Read dislocation clustering model. The laser energy density and mesa spacing are shown to be key factors in the auto-split LLO method. It is believed that this method offers an alternative way to fabricate high-performance GaN-based thin-film LEDs.
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91862]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen, M.,Zhang, B. P.,Cai, L. E.,et al. Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes[J]. http://dx.doi.org/10.1109/JPHOT.2013.2274768,2013.
APA	Chen, M..,Zhang, B. P..,Cai, L. E..,Zhang, J. Y..,Ying, L. Y..,...&张保平.(2013).Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes.http://dx.doi.org/10.1109/JPHOT.2013.2274768.
MLA	Chen, M.,et al."Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes".http://dx.doi.org/10.1109/JPHOT.2013.2274768 (2013).