Favourable photovoltaic effects in InGaN pin homojunction solar cell

CORC > 厦门大学 > 物理技术－已发表论文

	Favourable photovoltaic effects in InGaN pin homojunction solar cell
	Cai, X. -M. ; Zeng, S. -W. ; Zhang, B. -P. ; Zhang BP(张保平)
刊名	http://dx.doi.org/10.1049/el.2009.2094
	2009-11-19
关键词	INN ABSORPTION GROWTH ENERGY GAP
英文摘要	InGaN pin homojunction solar cells with different In content (x = 0.02/0.12/0.15) have been fabricated. The measured open-circuit voltages (V(oc)) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.
语种	英语
出版者	ELECTRON LETT
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91729]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cai, X. -M.,Zeng, S. -W.,Zhang, B. -P.,et al. Favourable photovoltaic effects in InGaN pin homojunction solar cell[J]. http://dx.doi.org/10.1049/el.2009.2094,2009.
APA	Cai, X. -M.,Zeng, S. -W.,Zhang, B. -P.,&张保平.(2009).Favourable photovoltaic effects in InGaN pin homojunction solar cell.http://dx.doi.org/10.1049/el.2009.2094.
MLA	Cai, X. -M.,et al."Favourable photovoltaic effects in InGaN pin homojunction solar cell".http://dx.doi.org/10.1049/el.2009.2094 (2009).