Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

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	Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer
	Cai, K. H. ; Li, C. ; Zhang, Y. ; Xu, J. F. ; Lai, H. K. ; Chen, S. Y. ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1016/j.apsusc.2008.02.075
	2008-06-30
关键词	THREADING DISLOCATION DENSITIES ON-INSULATOR LAYERS GEXSI1-X LAYERS GE RELAXATION
英文摘要	Thermal annealing effects on a thin compositionally graded SiGe buffer layer on silicon substrate fabricated by oxidizing a strained SiGe layer are investigated with X-ray diffraction, ultraviolet Raman spectra and atomic force microscopy. Interestingly, we found that the surface roughness and the threading dislocation densities are kept low during the whole annealing processes, while the Ge concentration at the oxidizing interface decreases exponentially with annealing time and the strain in the layer is only relaxed about 66% even at 1000 degrees C for 180 min. We realized that the strain relaxation of such a compositionally graded SiGe buffer layer is dominated by Si-Ge intermixing, rather than generation and propagation of misfit dislocations or surface undulation. (c) 2008 Elsevier B.V. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70193]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cai, K. H.,Li, C.,Zhang, Y.,et al. Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer[J]. http://dx.doi.org/10.1016/j.apsusc.2008.02.075,2008.
APA	Cai, K. H..,Li, C..,Zhang, Y..,Xu, J. F..,Lai, H. K..,...&陈松岩.(2008).Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer.http://dx.doi.org/10.1016/j.apsusc.2008.02.075.
MLA	Cai, K. H.,et al."Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer".http://dx.doi.org/10.1016/j.apsusc.2008.02.075 (2008).