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	Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes
	Hu Mei-Jiao ; Li Cheng ; Xu Jian-Fang ; Lai Hong-Kai ; Chen Song-Yan ; Chen SY(陈松岩)
	2011-07
关键词	SIGE-ON-INSULATOR STRAINED SI GERMANIUM FABRICATION ULTRATHIN MOSFETS SI0.5GE0.5 FRACTION LAYER
英文摘要	National Basic Research Program of China [2007CB613404]; National Natural Science Foundation of China [61036003, 60837001]; Si(0.82)Ge(0.18)/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator (SGOI) substrate (0.24 <= x(Ge) <= 1) by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence (PL) spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator (GeOI), with a thickness of 11 nm, is obtained with a flat Ge/SiO(2) interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70189]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Hu Mei-Jiao,Li Cheng,Xu Jian-Fang,et al. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes[J],2011.
APA	Hu Mei-Jiao,Li Cheng,Xu Jian-Fang,Lai Hong-Kai,Chen Song-Yan,&陈松岩.(2011).Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes..
MLA	Hu Mei-Jiao,et al."Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes".(2011).

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