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	Interfacial properties between CoO (100) and Fe(3)O(4) (100)
	Wang, Hui-Qiong ; Altman, Eric I. ; Henrich, Victor E. ; Wang HQ(王惠琼)
	2008
关键词	PHOTOELECTRON-SPECTRA ELECTRONIC-STRUCTURE TRANSITION POINT FILMS COO(100) GROWTH SUPERLATTICES TEMPERATURES DIFFERENCE SURFACES
英文摘要	Using molecular beam epitaxy 1-20 ML thick CoO (100) films were grown monolayer by monolayer on Fe(3)O(4) (100) substrates. The stoichiometry of the films was verified by low-energy-electron diffraction and reflection-high-energy-electron diffraction patterns, as well as x-ray photoelectron spectroscopy. Auger measurements as a function of CoO film thickness indicated a layer-by-layer growth mode. Ultraviolet photoelectron spectroscopy (UPS) was used to monitor the thin film electronic properties. The evolution of the density of states in the O 2p/Fe 3d and O 2p/Co 3d bands exhibits a shift in the position of the CoO valence band for ultrathin films relative to bulklike thick films. The measured spectra (when aligned to cancel the band shift) are compared to models of the spectra that would be expected based on the bulk compounds, with and without additional interfacial electronic states. Electronic states at the Fe(3)O(4)-CoO interface have been identified, and their UPS spectrum has been determined.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69686]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wang, Hui-Qiong,Altman, Eric I.,Henrich, Victor E.,et al. Interfacial properties between CoO (100) and Fe(3)O(4) (100)[J],2008.
APA	Wang, Hui-Qiong,Altman, Eric I.,Henrich, Victor E.,&王惠琼.(2008).Interfacial properties between CoO (100) and Fe(3)O(4) (100)..
MLA	Wang, Hui-Qiong,et al."Interfacial properties between CoO (100) and Fe(3)O(4) (100)".(2008).

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