Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride | |
Fang, Z. L. ; Kang, J. Y. ; Shen, W. Z. ; Fang ZL(方志来) | |
刊名 | http://dx.doi.org/10.1021/jp806202n |
2008-11-13 | |
关键词 | LIGHT-EMITTING-DIODES OPTICAL-PROPERTIES SELF-ORGANIZATION GAN NANOWIRES GROWTH ACCEPTOR DONOR SI |
英文摘要 | National Natural Science Foundation of China [60876008]; Conventional undoped gallium nitride (GaN) surface was treated with trimethylgallium (TMGa) flow for 100 s in the ambient of H-2 and low ammonia at 500 degrees C and 500 Torr followed by thermal annealing at 1050 degrees C. On the Gallium droplets and GaN nanoislands patterned layer-structured surface, droplet homoepitaxy of thin GaN layers was realized by flowing the surface with TMGa and low ammonia at 1035 degrees C for 400 s in the ambient of H2. By such an in situ three-step surface modification, the surface stoichiometry (Ga/N) changed from nonstoichiometry (N-rich, 0.92) to close-to-stoichiometry (slightly Ga-rich, 1.04) with very thin nanoislands (20 nm in diameter and I nm in height) patterning on the smooth layer-structured surface. Photoluminescence studies show significant reduction of yellow/blue emissions, which suggests improvement of surface/interface qualities of GaN films. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/69285] |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Fang, Z. L.,Kang, J. Y.,Shen, W. Z.,et al. Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride[J]. http://dx.doi.org/10.1021/jp806202n,2008. |
APA | Fang, Z. L.,Kang, J. Y.,Shen, W. Z.,&方志来.(2008).Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride.http://dx.doi.org/10.1021/jp806202n. |
MLA | Fang, Z. L.,et al."Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride".http://dx.doi.org/10.1021/jp806202n (2008). |
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