Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure

CORC > 厦门大学 > 物理技术－已发表论文

	Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure
	Chen, P. ; Zuo, Y. H. ; Tu, X. G. ; Cai, D. J. ; Li, S. P. ; Kang, J. Y. ; Yu, Y. D. ; Yu, J. Z. ; Wang, Q. M. ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1063/1.2918449
	2008-04-21
关键词	MACH-ZEHNDER INTERFEROMETER GAN THIN-FILMS 2ND-HARMONIC GENERATION ELECTROOPTIC COEFFICIENTS ELECTROREFLECTANCE SUSCEPTIBILITIES
英文摘要	We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al(0.53)Ga(0.47)N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69165]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen, P.,Zuo, Y. H.,Tu, X. G.,et al. Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure[J]. http://dx.doi.org/10.1063/1.2918449,2008.
APA	Chen, P..,Zuo, Y. H..,Tu, X. G..,Cai, D. J..,Li, S. P..,...&康俊勇.(2008).Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure.http://dx.doi.org/10.1063/1.2918449.
MLA	Chen, P.,et al."Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure".http://dx.doi.org/10.1063/1.2918449 (2008).