Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride

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	Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride
	Fang, Z. L. ; Kang, J. Y. ; Shen, W. Z. ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1021/jp806202n
	2008-11-13
关键词	LIGHT-EMITTING-DIODES OPTICAL-PROPERTIES SELF-ORGANIZATION GAN NANOWIRES GROWTH ACCEPTOR DONOR SI
英文摘要	National Natural Science Foundation of China [60876008]; Conventional undoped gallium nitride (GaN) surface was treated with trimethylgallium (TMGa) flow for 100 s in the ambient of H-2 and low ammonia at 500 degrees C and 500 Torr followed by thermal annealing at 1050 degrees C. On the Gallium droplets and GaN nanoislands patterned layer-structured surface, droplet homoepitaxy of thin GaN layers was realized by flowing the surface with TMGa and low ammonia at 1035 degrees C for 400 s in the ambient of H2. By such an in situ three-step surface modification, the surface stoichiometry (Ga/N) changed from nonstoichiometry (N-rich, 0.92) to close-to-stoichiometry (slightly Ga-rich, 1.04) with very thin nanoislands (20 nm in diameter and I nm in height) patterning on the smooth layer-structured surface. Photoluminescence studies show significant reduction of yellow/blue emissions, which suggests improvement of surface/interface qualities of GaN films.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69128]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Fang, Z. L.,Kang, J. Y.,Shen, W. Z.,et al. Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride[J]. http://dx.doi.org/10.1021/jp806202n,2008.
APA	Fang, Z. L.,Kang, J. Y.,Shen, W. Z.,&康俊勇.(2008).Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride.http://dx.doi.org/10.1021/jp806202n.
MLA	Fang, Z. L.,et al."Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride".http://dx.doi.org/10.1021/jp806202n (2008).