The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses | |
Hu, Xiao-Long ; Hu XL(胡晓龙) ; Zhang, Jiang-Yong(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences) ; Shang, Jing-Zhi(Nanyang Technol Univ, Div Phys & Appl Phys) ; Liu, Wen-Jie ; Liu WJ(刘文杰) ; Zhang, Bao-Ping ; Zhang BP(张保平) | |
2010 | |
关键词 | exciton-longitudinal-optical-phonon InGaN/GaN single quantum well GaN cap layer Huang-Rhys factor |
英文摘要 | This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer; National Natural Science Foundation of China [60876007, 10974165]; Xiamen Municipal Science and Technology Bureau, China [2006AA03Z110] |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
内容类型 | 期刊论文 |
源URL | [http://iopscience.iop.org/1674-1056/19/11/117801] ![]() |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Hu, Xiao-Long,Hu XL,Zhang, Jiang-Yong,et al. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses[J],2010. |
APA | Hu, Xiao-Long.,胡晓龙.,Zhang, Jiang-Yong.,Shang, Jing-Zhi.,Liu, Wen-Jie.,...&张保平.(2010).The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses.. |
MLA | Hu, Xiao-Long,et al."The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses".(2010). |
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