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	Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs
	Niu, G. F. ; Yang, H. ; Varadharajaperumal, M. ; Shi, Y. ; Cressler, J. D. ; Krithivasan, R. ; Marshall, P. W. ; Reed, R. ; Shi Y(石艳)
	2005
关键词	charge collection charge sharing SEU SiGeHBT
英文摘要	We present a new back junction approach for reducing SEU-induced charge collection in SiGe HBTS, and demonstrate its effectiveness in a state-of-the-art 200 GHz SiGe HBT using full 3-D device simulation. An additional n(+) layer is used below the p-type isolation layer to form a back junction. The back junction limits potential funneling to within the p-type layer, which effectively limits the total amount of drift charge collection that is now shared by the collector-to-substrate junction and the back junction. The back junction also cuts off the diffusion charge coming from the substrate, further limiting charge collection by the HBT collector. A thinner p-type "substrate" layer and a better contact to the added n+ layer are shown to help reduce charge collection by the HBT collector, the sensitive node.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/65438]
专题	生命科学－已发表论文
推荐引用方式 GB/T 7714	Niu, G. F.,Yang, H.,Varadharajaperumal, M.,et al. Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs[J],2005.
APA	Niu, G. F..,Yang, H..,Varadharajaperumal, M..,Shi, Y..,Cressler, J. D..,...&石艳.(2005).Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs..
MLA	Niu, G. F.,et al."Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs".(2005).

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