Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure | |
Chen, P ; Zuo, YH ; Tu, XG ; Cai, DJ ; Li, SP ; Kang, JY ; Yu, YD ; Yu, JZ ; Wang, QM | |
刊名 | http://dx.doi.org/10.1063/1.2918449 |
2008-04-21 | |
关键词 | MACH-ZEHNDER INTERFEROMETER GAN THIN-FILMS 2ND-HARMONIC GENERATION ELECTROOPTIC COEFFICIENTS ELECTROREFLECTANCE SUSCEPTIBILITIES |
英文摘要 | We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al(0.53)Ga(0.47)N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/62763] |
专题 | 化学化工-已发表论文 |
推荐引用方式 GB/T 7714 | Chen, P,Zuo, YH,Tu, XG,et al. Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure[J]. http://dx.doi.org/10.1063/1.2918449,2008. |
APA | Chen, P.,Zuo, YH.,Tu, XG.,Cai, DJ.,Li, SP.,...&Wang, QM.(2008).Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure.http://dx.doi.org/10.1063/1.2918449. |
MLA | Chen, P,et al."Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure".http://dx.doi.org/10.1063/1.2918449 (2008). |
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