High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates

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	High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
	Cai,LE ; Yu,JZ ; Wu,CM ; Zhang,BP ; Wang,QM ; Shang,JZ ; Zhang,JY ; Wang QM(王泉明)
刊名	http://dx.doi.org/10.1016/j.apsusc.2008.09.046
	2008-12-30
关键词	SAPPHIRE SUBSTRATE QUANTUM-WELLS GAN TEMPLATES FILMS STRAIN RELAXATION DEFECTS ALGAN
英文摘要	High Technology Research and Development of China [2006AA03Z409]; We studied the structural and optical properties of high Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Direct evidences of the gradual evolution of the content of Al, Ga and In along the growth direction were obtained. When the film thickness was over a certain value, however, the AlInGaN epilayer with constant element contents began to form. These results were also supported by the blue shift and splitting of the photoluminescence (PL) peak. For the thinnest epilayer, the surface was featured with outcrops of threading dislocations (TDs) which suggested a spiral growth mode. With increase in thickness, step-flow growth mode and V-shaped pits were observed, and the steps terminated at the pits. (C) 2008 Elsevier B. V. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/62760]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Cai,LE,Yu,JZ,Wu,CM,et al. High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates[J]. http://dx.doi.org/10.1016/j.apsusc.2008.09.046,2008.
APA	Cai,LE.,Yu,JZ.,Wu,CM.,Zhang,BP.,Wang,QM.,...&王泉明.(2008).High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates.http://dx.doi.org/10.1016/j.apsusc.2008.09.046.
MLA	Cai,LE,et al."High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates".http://dx.doi.org/10.1016/j.apsusc.2008.09.046 (2008).