Effect of rapid thermal processing on copper precipitation in p/p(+) silicon epitaxial wafers with heavily boron-doped substrates

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	Effect of rapid thermal processing on copper precipitation in p/p(+) silicon epitaxial wafers with heavily boron-doped substrates
	Xu, Jin ; Ji, Chuan ; Zhang, Guangchao ; Xu J(徐进)
刊名	http://dx.doi.org/10.1063/1.4862179
	2014-01-14
关键词	INTRINSIC POINT-DEFECTS CZOCHRALSKI SILICON RECOMBINATION ACTIVITY OXYGEN PRECIPITATION CRYSTAL-GROWTH IMPURITIES BEHAVIOR
英文摘要	National Natural Science Foundation of China [50902116]; Opening Project of State Key Laboratory of Silicon Materials [SKL2012-17]; State Scholarship Fund of China, China Scholarship Council [201208350046]; The effect of rapid thermal processing (RTP) on the formation of copper precipitation in p/p(+) silicon (Si) epitaxial wafers was systematically investigated by defect etching and optical microscopy. After RTP preannealing at high temperature (1250 degrees C/60 s, with cooling rate 30 K/s) followed by the 750 degrees C/8 h + 1050 degrees C/16 h low-high (L-H) two-step annealing, it was revealed that the bulk microdefects were found only inside the p(+) substrate, manifesting no defects generated in the epitaxial layer. However, it was found that the width of denude zone (DZ) in samples only subjected to L-H two-step annealing was narrower than that of epitaxial layer, which meant that oxygen precipitation was formed in epitaxial layer. It can be concluded that RTP was beneficial to the formation of DZ. Additionally, it was found that the width of DZ has a sharp dependence on the introducing temperature of copper contamination, that is, the corresponding equilibrium concentration of interstitial copper in the Si influence the thermodynamics and kinetics process of the formation of copper precipitation significantly. (C) 2014 AIP Publishing LLC.
语种	英语
出版者	AMER INST PHYSICS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/87366]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Xu, Jin,Ji, Chuan,Zhang, Guangchao,et al. Effect of rapid thermal processing on copper precipitation in p/p(+) silicon epitaxial wafers with heavily boron-doped substrates[J]. http://dx.doi.org/10.1063/1.4862179,2014.
APA	Xu, Jin,Ji, Chuan,Zhang, Guangchao,&徐进.(2014).Effect of rapid thermal processing on copper precipitation in p/p(+) silicon epitaxial wafers with heavily boron-doped substrates.http://dx.doi.org/10.1063/1.4862179.
MLA	Xu, Jin,et al."Effect of rapid thermal processing on copper precipitation in p/p(+) silicon epitaxial wafers with heavily boron-doped substrates".http://dx.doi.org/10.1063/1.4862179 (2014).