Instability of nitrogen doped Sb2Te3 for phase change memory application

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	Instability of nitrogen doped Sb2Te3 for phase change memory application
	Li, Xuelai ; Rao, Feng ; Song, Zhitang ; Zhu, Min ; Liu, Weili ; Sun, Zhimei ; Sun ZM(孙志梅)
刊名	http://dx.doi.org/10.1063/1.3660705
	2011-11-01
英文摘要	National Integrate Circuit Research Program of China [2009ZX02023-003]; National Basic Research Program of China [2007CB935400, 2010CB934300, 2011CB309602, 2011CB932800]; National Natural Science Foundation of China [60906004, 60906003, 61006087, 61076121; By means of experimental methods and ab initio total energy calculations, we have studied the stability and properties of nitrogen doped Sb2Te3 (NST). The NST film displayed a higher crystallization temperature and sheet resistance than undoped Sb2Te3 (ST) film. Nevertheless, the sheet resistance of the crystalline NST film unexpectedly increased as the temperature increased when the temperature was above 260 degrees C. The X-ray photoelectron spectroscopy (XPS) showed that the nitrogen concentration and the Sb-N bonds were decreasing as the annealing temperature increased, and no nitrogen existed in the NST when annealed at 300 degrees C for 5 min. Our theoretical calculations showed that the incorporation of nitrogen into crystalline Sb2Te3 was not energetically favorable, and the nitrogen atoms preferred forming chemical bonds with Sb atoms to Te atoms. (C) 2011 American Institute of Physics. [doi:10.1063/1.3660705]
语种	英语
出版者	J APPL PHYS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/87166]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Li, Xuelai,Rao, Feng,Song, Zhitang,et al. Instability of nitrogen doped Sb2Te3 for phase change memory application[J]. http://dx.doi.org/10.1063/1.3660705,2011.
APA	Li, Xuelai.,Rao, Feng.,Song, Zhitang.,Zhu, Min.,Liu, Weili.,...&孙志梅.(2011).Instability of nitrogen doped Sb2Te3 for phase change memory application.http://dx.doi.org/10.1063/1.3660705.
MLA	Li, Xuelai,et al."Instability of nitrogen doped Sb2Te3 for phase change memory application".http://dx.doi.org/10.1063/1.3660705 (2011).