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	Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction(英文发表)
	张晓娜
	2012-04-13 ; 2012-04-13
中文摘要	A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 °C in a molecular beam epi
原文出处	http://dlib.edu.cnki.net/kns50/download.aspx?filename=DFFS1ckUw5kTml2KZNUcmpGa1M2LSNlMHdXSWRDVoFmRaNTZvk2U3NGM4NVOrl0Z3hVNndEV2hmSBZXVnx0U4FHV2cUS4Z1YstWUaNjTvImSJVmavsSWWVGaD9SOW12UV50TCBjSBdEeDRlRnFEds9CeRBnS2MDb&tablename=CJFD2009&dflag=pdfdown 全文链接
其他责任者	Xi-Na, Wang ; Yong, Wang ; Jin, Zou ; Tian-Chong, Zhang ; Zeng-Xia, Mei ; Yang, Guo ; Qi-Kun, Xue ; Xiao-Long, Du ; Xiao-Na, Zhang ; Xiao-Dong, Han ; Ze, Zhang
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16718]
专题	北京工业大学
推荐引用方式 GB/T 7714	张晓娜. Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction(英文发表)[J],2012, 2012.
APA	张晓娜.(2012).Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction(英文发表)..
MLA	张晓娜."Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction(英文发表)".(2012).

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