| 沟道形状对无结型多栅器件性能影响探究 | |
| 胡梦月 ; 梁仁荣 ; 王敬 ; 许军 ; HU Mengyue ; LIANG Renrong ; WANG Jing ; XU Jun | |
| 2016-03-30 ; 2016-03-30 | |
| 关键词 | 无结型晶体管 沟道形状 短沟道效应 Junctionless transistor Channel geometry Short-channel effects TN386.1 |
| 其他题名 | Study on the Effects of Channel Geometry on the Performance of Junctionless Field Effect Transistors |
| 中文摘要 | 随着集成电路特征尺寸进入纳米尺度,摩尔定律的延续受到一定的挑战,纳米技术代的晶体管亟需全新的材料、器件结构和工艺集成技术。在器件结构方面,无结型场效应晶体管由于其近似理想的电流电压特性、优良的等比例缩小能力以及极其简单的制造工艺,受到了人们广泛的关注。通过三维数值仿真工具Synopsys Sentaurus 3DTCAD,对多栅的无结型MOS晶体管进行了数值模拟仿真。并在此基础上探究了无结型器件沟道形状对其电学特性的影响,提出了具有倒角正梯形沟道的多栅无结型晶体管结构,验证了其相较于普通无结多栅型器件更加优良的电学特性,以及栅长下降至20nm以下节点时对短沟道效应的进一步抑制作用。; In this study we analyze the influence of channel geometry on the performance of junctionless field effect transistors,which has recently been proposed as a promising alternative candidate for conventional MOSFETs in nano-scale technology nodes.Four channel geometrical structures are studied and compared,including rectangle,upper-corner,omega and trapezoid.Tri-gate structure is applied to junctionless transistor to enhance gate control ability over the channel.3-dimensional numerical simulation results show that compared to the junctionless transistor with a rectangle channel,trapezoidal-shape channel junctionless transistor exhibits better electrical characteristics,as well as better performance in suppression of short-channel effects(SCEs).It has lower DIBL value,steeper subthreshold slope and higher on/off current ratio,especially when the gate length is scaled down below 20nm. |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147053]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 胡梦月,梁仁荣,王敬,等. 沟道形状对无结型多栅器件性能影响探究[J],2016, 2016. |
| APA | 胡梦月.,梁仁荣.,王敬.,许军.,HU Mengyue.,...&XU Jun.(2016).沟道形状对无结型多栅器件性能影响探究.. |
| MLA | 胡梦月,et al."沟道形状对无结型多栅器件性能影响探究".(2016). |
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