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	Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation
	Tan Z(谭桢) ; Zhao LF(赵连锋) ; Wang J(王敬) ; Xu J(许军) ; Tan Zhen ; Zhao Lian-Feng ; Wang Jing ; Xu Jun
	2016-03-30 ; 2016-03-30
关键词	HfAlO GaSb metal-oxide-semiconductor capacitors interfacial properties TM53
其他题名	Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation
中文摘要	Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.; Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.
语种	英语 ; 英语
内容类型	期刊论文
源URL	[http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147010]
专题	清华大学
推荐引用方式 GB/T 7714	Tan Z,Zhao LF,Wang J,et al. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation[J],2016, 2016.
APA	谭桢.,赵连锋.,王敬.,许军.,Tan Zhen.,...&Xu Jun.(2016).Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation..
MLA	谭桢,et al."Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation".(2016).

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