SrTiO_3(001)衬底上单层FeSe超导薄膜的分子束外延生长 | |
王萌 ; 欧云波 ; 李坊森 ; 张文号 ; 汤辰佳 ; 王立莉 ; 薛其坤 ; 马旭村 ; Wang Meng ; Ou Yun-Bo ; Li Fang-Sen ; Zhang Wen-Hao ; Tang Chen-Jia ; Wang Li-Li ; Xue Qi-Kun ; Ma Xu-Cun | |
2016-03-30 ; 2016-03-30 | |
关键词 | SrTiO3(001) 单层FeSe薄膜 高温超导 分子束外延 SrTiO 3(001) single unit-cell FeSe films high temperature superconductivity molecular beam epitaxy TN304.054 |
其他题名 | Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO_3(001) |
中文摘要 | 在以前工作的基础上,进一步研究了SrTiO3(001)(STO)衬底上单层FeSe超导薄膜的分子束外延生长.首先,通过去离子水刻蚀、盐酸溶液腐蚀和纯氧气氛中退火等步骤,获得台阶有序、具有单一TiO2终止的原子级平整表面的STO衬底,这是前提条件.这个过程中酸的选择和退火过程中氧的流量是最为关键的因素.其次,在FeSe薄膜的分子束外延生长中,选择适当的Fe源和Se源束流以及衬底温度是关键因素.如选择适当,生长模式为step-?ow生长,这时得到的FeSe薄膜将是原子级平整的.最后一步为退火,这个过程会增强FeSe薄膜结晶性以及它与SrTiO3衬底间的结合强度.; Based on our previous work, we have systematically investigated the molecular beam epitaxy growth of single unit-cell FeSe films on SrTiO3(001) substrates and studied the surface morphology by scanning tunneling microscopy.We found that there are three key steps to obtain large-scale uniform one unit-cell superconducting FeSe films. First,the STO(001) substrates should be treated by HCl etching and thermal annealing under oxygen fiux so that a specific TiO2-terminated STO(001) surface with well-defined step-terrace structure could be obtained. Second, the Fe and Sefiuxes and substrate temperature have to be controlled delicately. At last, post-growth annealing is also critical, which can remove extra Se adatoms, and more importantly facilitate the necessary electron transfer for superconductivity transition. |
语种 | 中文 ; 中文 |
内容类型 | 期刊论文 |
源URL | [http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/146022] |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | 王萌,欧云波,李坊森,等. SrTiO_3(001)衬底上单层FeSe超导薄膜的分子束外延生长[J],2016, 2016. |
APA | 王萌.,欧云波.,李坊森.,张文号.,汤辰佳.,...&Ma Xu-Cun.(2016).SrTiO_3(001)衬底上单层FeSe超导薄膜的分子束外延生长.. |
MLA | 王萌,et al."SrTiO_3(001)衬底上单层FeSe超导薄膜的分子束外延生长".(2016). |
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