在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件 | |
韦庞 ; 李康 ; 冯硝 ; 欧云波 ; 张立果 ; 王立莉 ; 何珂 ; 马旭村 ; 薛其坤 ; Wei Pang ; Li Kang ; Feng Xiao ; Ou Yun-Bo ; Zhang Li-Guo ; Wang Li-Li ; He Ke ; Ma Xu-Cun ; Xue Qi-Kun | |
2016-03-30 ; 2016-03-30 | |
关键词 | 拓扑绝缘体 钛酸锶 光刻 霍尔效应 topological insulator SrTiO 3 phtotolithography Hall effect TN304.054 |
其他题名 | Growth of micro-devices of topological insulator thin films by molecular beam epitaxy on substrates pre-patterned with photolithography |
中文摘要 | 在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,直接获得了薄膜的Hall bar微器件,从而避免了光刻过程对材料质量的影响.原子力显微镜和输运测量结果均显示该微器件保持了(Bi x Sb1-x)2Te3外延薄膜原有的性质.这种新的微器件制备方法有助于在拓扑绝缘体中实现各种新奇的量子效应,并可推广于其他外延生长的低维系统.; In the fabrication of micrometer-sized structures from an epitaxial topological insulator thin film with photolithography, the film is usually deteriorated by the chemicals used in the process. By molecular beam epitaxy of(Bi x Sb1-x)2Te3topological insulator onto Hall bar-shaped plateaus pre-lithographed on SrTiO3substrate, we have directly prepared Hall bar devices of epitaxial topological insulator thin film, avoiding the degradation of film quality in photolithography.Atomic force microscope and transport measurements have demonstrated that the Hall bar devices have the similar properties as that of(Bi x Sb1-x)2Te3films epitaxied on ordinary SrTiO3substrates. The new microfabrication method can not only help to realize various novel quantum phenomena predicted in topological insulators but be applied to other epitaxial low-dimensional systems as well. |
语种 | 中文 ; 中文 |
内容类型 | 期刊论文 |
源URL | [http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/146021] |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | 韦庞,李康,冯硝,等. 在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件[J],2016, 2016. |
APA | 韦庞.,李康.,冯硝.,欧云波.,张立果.,...&Xue Qi-Kun.(2016).在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件.. |
MLA | 韦庞,et al."在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件".(2016). |
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