Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm
	Yao JK(姚建可) ; Ma JY(麻健勇) ; Xiu Cheng ; Fan ZX(范正修) ; Jin Yunxia ; Zhao Yuanan ; He HB(贺洪波) ; Shao JD(邵建达) ; Huang Huolin ; Zhang Feng ; Wu Zhengyun
刊名	j. appl. phys.
	2008
卷号	103 期号:8 页码:83103
关键词	Laser-induced damage threshold (LIDT) Laser-induced modification
ISSN号	0021-8979
中文摘要	a high laser-induced damage threshold (lidt) tio2/sio2 high reflector (hr) at 1064 nm is deposited by e-beam evaporation. the hr is characterized by optical properties, surface, and cross section structure. lidt is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. raman technique and scanning electron microscope are used to analyze the laser-induced modification of hr. the possible damage mechanism is discussed. it is found that the lidt of hr is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of tio2 layer. three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. the laser-induced crystallization consists well with the thermal damage nature of hr. (c) 2008 american institute of physics.
学科主题	光学薄膜
收录类别	EI
语种	英语
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4676]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Yao JK,Ma JY,Xiu Cheng,et al. Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm[J]. j. appl. phys.,2008,103(8):83103.
APA	姚建可.,麻健勇.,Xiu Cheng.,范正修.,Jin Yunxia.,...&Wu Zhengyun.(2008).Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm.j. appl. phys.,103(8),83103.
MLA	姚建可,et al."Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm".j. appl. phys. 103.8(2008):83103.