QQ客服 官方微博 反馈留言

	ILT approach for compensating 3-D mask effects
	Xiong Wei ; Zhang Jinyu ; Min-Chun Tsai ; Wang Yan ; Yu Zhiping
	2010-10-12 ; 2010-10-12
关键词	Practical Theoretical or Mathematical/ lithography masks simulated annealing/ 3D mask effect object-based ILT approach simulated annealing algorithm inverse lithography technique image fidelity/ B2550G Lithography (semiconductor technology) B0260 Optimisation techniques
中文摘要	As mask features scale to smaller dimensions, the so-called "3-D mask effects" which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
语种	英语
出版者	Tsinghua University Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82186]
专题	清华大学
推荐引用方式 GB/T 7714	Xiong Wei,Zhang Jinyu,Min-Chun Tsai,et al. ILT approach for compensating 3-D mask effects[J],2010, 2010.
APA	Xiong Wei,Zhang Jinyu,Min-Chun Tsai,Wang Yan,&Yu Zhiping.(2010).ILT approach for compensating 3-D mask effects..
MLA	Xiong Wei,et al."ILT approach for compensating 3-D mask effects".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。