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	Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization
	Fu Jun
	2010-10-12 ; 2010-10-12
关键词	Practical Theoretical or Mathematical/ equivalent circuits Ge-Si alloys heterojunction bipolar transistors microwave transistors semiconductor device models/ small-signal model parameter extraction microwave transistors heterojunction bipolar transistors Y-parameter characterization Z-parameter characterization equivalent circuit base-collector capacitances Taurus-device simulator device frequency behavior SiGe/ B1350F Solid-state microwave circuits and devices B2560J Bipolar transistors B2560B Semiconductor device modelling and equivalent circuits/ SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin
中文摘要	High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y - and Z -parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y - and Z -parameters as nominal "measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S -parameters as a function of frequency.
语种	英语
出版者	IOP Publishing Ltd. ; UK
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82160]
专题	清华大学
推荐引用方式 GB/T 7714	Fu Jun. Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization[J],2010, 2010.
APA	Fu Jun.(2010).Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization..
MLA	Fu Jun."Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization".(2010).

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