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	The electronic properties of SiCAlN quaternary compounds
	Liu, Z.Q. ; Ni, J.
	2010-10-12 ; 2010-10-12
关键词	Theoretical or Mathematical/ ab initio calculations aluminium compounds charge exchange electronic density of states energy gap lattice constants metal-insulator transition silicon compounds wide band gap semiconductors/ electronic properties quaternary compounds first-principle calculations band gaps polytype structures wide-band-gap semiconducting nature metallic nature complex charge transfer lattice constants partial density of states SiCAlN/ A7125T Electronic structure of crystalline semiconductor compounds and insulators A7130 Metal-insulator transitions and other electronic transitions A6160 Crystal structure of specific inorganic compounds A7115A Ab initio calculations (condensed matter electronic structure)/ SiCAlN/ss Al/ss Si/ss C/ss N/ss
中文摘要	We have investigated the properties of SiCAIN quaternary compounds composed of SiC and AlN polytypes by first-principle calculations. We find that their band gaps have a large tunability and are sensitive to the polytype structures. Their electronic properties vary from wide-band-gap semiconducting l.o metallic due to the complex charge transfer between the two constituents SiC and AlN. The formation energies are also calculated. These results show SiCAIN quaternary compounds have potential applications in the electronic devices that can be tuned over a large wavelength range.
语种	英语
出版者	EDP Sciences and Springer-Verlag ; France
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/81625]
专题	清华大学
推荐引用方式 GB/T 7714	Liu, Z.Q.,Ni, J.. The electronic properties of SiCAlN quaternary compounds[J],2010, 2010.
APA	Liu, Z.Q.,&Ni, J..(2010).The electronic properties of SiCAlN quaternary compounds..
MLA	Liu, Z.Q.,et al."The electronic properties of SiCAlN quaternary compounds".(2010).

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