薄膜厚度对HfO2薄膜残余应力的影响

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	薄膜厚度对HfO2薄膜残余应力的影响; Influences of the film thickness on residual stress of the HfO2 thin films
	申雁鸣 ; 贺洪波 ; 邵淑英 ; 范正修 ; 邵建达
刊名	稀有金属材料与工程
	2007
卷号	36 期号:3 页码:412
关键词	HfO2薄膜 HfO2 thin film 残余应力 residual stress 膜厚 thin film thickness 电子束蒸发 electron beam evaporation
ISSN号	1002-185X
其他题名	Influences of the film thickness on residual stress of the HfO2 thin films
中文摘要	HfO2薄膜是用电子束蒸发方法制备的，利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化，计算了薄膜应力。对样品进行了XRD测试，讨论了膜厚对薄膜残余应力的影响。结果发现不同厚度HfO2薄膜的残余应力均为张应力，应力值随薄膜厚度的增加而减小，当薄膜厚度达到一定值后，应力值趋于稳定。从微观结构变化对实验结果进行了分析，发现微结构演变引起的本征应力变化是引起薄膜残余应力改变的主要因素。; HfO2 thin films were prepared by electron beam evaporation. The residual stress was measured by viewing the substrate deflection using ZYGO interferometer. The microstructure of the HfO2 thin films was inspected by X-ray diffraction (XRD). The results show that the stress is tensile and the value of the residual stress decreases with the increase of the thin film thickness, and residual stress becomes stable when the film thickness reaches a certain value. The interplanar distance of the thin film increases with the increase of the thin film thickness, which is corresponding to the variation of the residual stress. The evolution of the residual stress may be due to the variation of the microstructure as the increasing of the thin film thickness.
学科主题	光学薄膜
分类号	TB43
收录类别	EI
语种	中文
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4614]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	申雁鸣,贺洪波,邵淑英,等. 薄膜厚度对HfO2薄膜残余应力的影响, Influences of the film thickness on residual stress of the HfO2 thin films[J]. 稀有金属材料与工程,2007,36(3):412, 415.
APA	申雁鸣,贺洪波,邵淑英,范正修,&邵建达.(2007).薄膜厚度对HfO2薄膜残余应力的影响.稀有金属材料与工程,36(3),412.
MLA	申雁鸣,et al."薄膜厚度对HfO2薄膜残余应力的影响".稀有金属材料与工程 36.3(2007):412.