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	Effect of pH on Material Removal Rate of Cu in Abrasive-Free Polishing
	Zhang Wei ; Lu Xinchun ; Liu Yuhong ; Pan Guoshun ; Luo Jianbin
	2010-10-12 ; 2010-10-12
关键词	HYDROGEN-PEROXIDE IMPEDANCE SPECTROSCOPY COMPLEXING AGENTS FUNCTIONAL-GROUPS CITRIC-ACID COPPER SLURRIES CMP MODEL Electrochemistry Materials Science, Coatings & Films
中文摘要	The effect of pH on the material removal rate (MRR) of Cu in an organic phosphonic acid system abrasive-free slurry was investigated by thermodynamics. X-ray photoelectron spectroscopy analysis, and electrochemical measurements. The pH range can be divided into three chemical regions according to the evolution of the polishing MRR, which relies on the effect of pH on the chelating effect of the chelating ligand. diethylene triamine penta methylene phosphonic acid. The higher the pH is. the more efficient the chelating ligand is. In the alkaline pH region. because of the enhanced chelating effect and precipitation of the chelate complex on the surface, both the MRR and friction coefficient during polishing process increase significantly, and the corrosion current acquired from the potentiodynamic polarization measurement decreases. (c) 2009 The Electrochemical Society. [DOI: 10.1149/1.3055985] All rights reserved.
语种	英语 ; 英语
出版者	ELECTROCHEMICAL SOC INC ; PENNINGTON ; 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/80441]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang Wei,Lu Xinchun,Liu Yuhong,et al. Effect of pH on Material Removal Rate of Cu in Abrasive-Free Polishing[J],2010, 2010.
APA	Zhang Wei,Lu Xinchun,Liu Yuhong,Pan Guoshun,&Luo Jianbin.(2010).Effect of pH on Material Removal Rate of Cu in Abrasive-Free Polishing..
MLA	Zhang Wei,et al."Effect of pH on Material Removal Rate of Cu in Abrasive-Free Polishing".(2010).

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