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	勾形磁场中直拉硅单晶浓度场的数值模拟研究
	王英伟 ; 刘景和 ; 程灏波 ; 李建利 ; WANG Yingwei ; LIU Jinghe ; CHENG Haobo ; LI Jianli
	2010-06-08 ; 2010-06-08
关键词	硅单晶 引上法晶体生长 勾形磁场 浓度场 有限差分法 数值模拟 silicon single crystal Czochralski method cusp magnetic field concentration field finite difference method numerical simulation TN304
其他题名	NUMERICAL SIMULATION OF CONCENTRATION FIELD DURING THE GROWTH OF SINGLE CRYSTAL Si IN A CUSP MAGNETIC FIELD
中文摘要	为有效控制晶体尺寸、金属杂质含量、掺杂元素及氧分布的均匀性,提出在非均匀轴对称勾形磁场中利用磁控提拉法生长硅单晶。用有限差分法对非均匀轴对称勾形磁场中直拉硅单晶体系中的浓度场进行数值模拟研究,基于直拉硅单晶生长系统的物理及数学模型,进行无量纲化处理,借助于相应的边界条件进行求解,并针对不同工艺条件下熔体中及界面处氧浓度分布情况进行模拟研究。结果表明:在勾形磁场作用下,通过改变磁场强度、晶体和坩埚转速及晶体半径可有效控制固液界面处氧浓度及分布均匀性,从而在晶体中获得径向均匀的氧浓度。; In order to control the size of crystal, the content of foreign metal impurities, the uniform distribution of oxygen and doped elements, a new crystal growth method, which is the combination of cusp magnetic field and Czochralski method, is proposed. Based on the physical and mathematical model for the growth system of Si crystal, the non-dimensional form treatment andfind the solution the help of boundary condition established, a numerical simulation on concentration field in the melt and the crystal is investigated by using FDM (finite difference method) during the growth of Si single crystal in the cusp magnetic. Simulation results indicate that the use of cusp magnetic field in the growth of Si crystal enables to achieve the distribution uniformity of oxygen concentration in the crystal by controlling the concentration and distribution of oxiygen element in the melt and at the solid-liquid interface through changing the density of magnetic field, rotating speed of the crystal and crucible, and radius of the crystal.
语种	中文 ; 中文
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/49303]
专题	清华大学
推荐引用方式 GB/T 7714	王英伟,刘景和,程灏波,等. 勾形磁场中直拉硅单晶浓度场的数值模拟研究[J],2010, 2010.
APA	王英伟.,刘景和.,程灏波.,李建利.,WANG Yingwei.,...&LI Jianli.(2010).勾形磁场中直拉硅单晶浓度场的数值模拟研究..
MLA	王英伟,et al."勾形磁场中直拉硅单晶浓度场的数值模拟研究".(2010).

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