| A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation | |
| Meng Xiang-Ti ; Huang Qiang ; Ma Yan-Xiu ; Zheng Yong-Nan ; Fan Ping ; Zhu Sheng-Yun | |
| 2010-05-10 ; 2010-05-10 | |
| 关键词 | semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation Physics, Nuclear Physics, Particles & Fields |
| 中文摘要 | The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1 x 10(9) to 4x10(10) cm(-2) and 1 x 10(9) to 2 x 10(12) cm(-2) have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4x10(10) and 2 x 10(12) cm(-2), respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program. |
| 语种 | 英语 ; 英语 |
| 出版者 | SCIENCE CHINA PRESS ; BEIJING ; 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/23144]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Meng Xiang-Ti,Huang Qiang,Ma Yan-Xiu,et al. A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation[J],2010, 2010. |
| APA | Meng Xiang-Ti,Huang Qiang,Ma Yan-Xiu,Zheng Yong-Nan,Fan Ping,&Zhu Sheng-Yun.(2010).A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation.. |
| MLA | Meng Xiang-Ti,et al."A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation".(2010). |
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