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	Change of properties of CMOS image sensor irradiated with 9 and 16MeV protons
	Xiang-Ti Meng ; Qiang Huang ; Xing-Yu Wang ; Yong-Nan Zheng ; Ping Fan ; Sheng-Yun Zhu
	2010-05-10 ; 2010-05-10
关键词	Practical/ CMOS image sensors electron-hole recombination proton effects/ CMOS image sensor proton irradiation color picture image capture antiirradiation fluence threshold irradiation-induced electron-hole pairs TRIM simulation program electron volt energy 9 MeV electron volt energy 16 MeV/ A4280Q Image detectors, convertors, and intensifiers A6180J Ion beam effects B7230G Image sensors B2550R Radiation effects on semiconductor devices B2570D CMOS integrated circuits/ electron volt energy 9.0E+06 eV electron volt energy 1.6E+07 eV
中文摘要	The 9 and 16 MeV proton irradiations of CMOS image sensor in the fluence range from 5*10/sup 8/ to 4*10/sup 10/ cm/sup -2/ and 5*10/sup 9/ to 1*10/sup 13/ cm/sup -2/ have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4*10/sup 10/ and 5*10/sup 12/cm/sup -2/, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
语种	英语 ; 英语
出版者	Trans Tech Publications Ltd ; Switzerland
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/23025]
专题	清华大学
推荐引用方式 GB/T 7714	Xiang-Ti Meng,Qiang Huang,Xing-Yu Wang,et al. Change of properties of CMOS image sensor irradiated with 9 and 16MeV protons[J],2010, 2010.
APA	Xiang-Ti Meng,Qiang Huang,Xing-Yu Wang,Yong-Nan Zheng,Ping Fan,&Sheng-Yun Zhu.(2010).Change of properties of CMOS image sensor irradiated with 9 and 16MeV protons..
MLA	Xiang-Ti Meng,et al."Change of properties of CMOS image sensor irradiated with 9 and 16MeV protons".(2010).

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