QQ客服 官方微博 反馈留言

	Effects of electron and gamma-ray irradiation on CMOS analog image sensors
	Xiang-Ti Meng ; Ai-Guo Kang ; Ji-Hong Li ; Hai-Yun Zhang ; Shi-Jie Yu ; Zheng You
	2010-05-10 ; 2010-05-10
关键词	Practical Experimental/ brightness CMOS image sensors electron beam effects gamma-ray effects/ gamma ray irradiation sensors electron irradiation sensors CMOS analog image sensors average brightness black complementary metal oxide semiconductor analog image sensors white complementary metal oxide semiconductor analog image sensors bright strips gamma -ray radiation damage 0.6 kGy 1.0 kGy 1.2 kGy 1.4 kGy 1.8 kGy/ B2550R Radiation effects on semiconductor devices B7230G Image sensors B7260D Display characteristics/ radiation absorbed dose 6.0E+02 Gy radiation absorbed dose 1.0E+03 Gy radiation absorbed dose 1.2E+03 Gy radiation absorbed dose 1.4E+03 Gy radiation absorbed dose 1.8E+03 Gy
中文摘要	Changes in the average brightness and non-uniformity of dark output images, and quality of the pictures captured under natural lighting from the black and white (B&W) complementary metal oxide semiconductor (CMOS) analog image sensors irradiated at different electron doses have been studied in comparison to those from the gamma -ray irradiated sensors. For the electron-irradiated sensors, picture becomes blurry at 1.0 kGy, average brightness increases sharply and bright strips appear only at 0.6 kGy, non-uniformity increases obviously with an increasing dose and reaches maximum at 1.0 kGy. But for the gamma -irradiated sensors, pictures and dark output images are nearly the same as that from the unirradiated CMOS image sensor up to 1.2 kGy, pictures become blurry above 1.8 kGy, and average brightness increases sharply above 1.4 kGy. Electron radiation damage is much more severe than gamma -ray radiation damage for the CMOS image sensors. A possible explanation is presented.
语种	英语 ; 英语
出版者	Elsevier ; UK
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/22947]
专题	清华大学
推荐引用方式 GB/T 7714	Xiang-Ti Meng,Ai-Guo Kang,Ji-Hong Li,et al. Effects of electron and gamma-ray irradiation on CMOS analog image sensors[J],2010, 2010.
APA	Xiang-Ti Meng,Ai-Guo Kang,Ji-Hong Li,Hai-Yun Zhang,Shi-Jie Yu,&Zheng You.(2010).Effects of electron and gamma-ray irradiation on CMOS analog image sensors..
MLA	Xiang-Ti Meng,et al."Effects of electron and gamma-ray irradiation on CMOS analog image sensors".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。