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	Microstructure and electronic properties of Al/Zr/LiNbO/sub 3/ multilayers
	Li, D.M. ; Pan, F. ; Wang, X.B. ; Niu, J.B. ; Liu, M.
	2010-05-10 ; 2010-05-10
会议名称	Materials Science Forum ; Fifth Pacific Rim International Conference on Advanced Materials and Processing PRICM-5 ; Beijing, China ; INSPEC
关键词	Experimental/ aluminium annealing crystal microstructure electrical resistivity lithium compounds multilayers sputter etching surface acoustic wave devices zirconium/ multilayer microstructure electronic properties Al/Zr/LiNbO/sub 3/ multilayers high power durability fine-dimensional control high-frequency surface acoustic wave devices texture orientation electronic beam evaporated Al films Zr underlayer electrical resistivity annealing reactive ion etching 200 degC Al-Zr-LiNbO/sub 3// A6480G Microstructure A7220F Low-field transport and mobility piezoresistance (semiconductors/insulators) A8160 Corrosion, oxidation, etching, and other surface treatments A8140G Other heat and thermomechanical treatments A4388 Transduction devices for the generation and reproduction of sound A7360H Electrical properties of insulators (thin films/low-dimensional structures) A7360D Electrical properties of metals and metallic alloys (thin films/low-dimensional structures) B2860C Acoustic wave devices/ temperature 4.73E+02 K/ Al-Zr-LiNbO3/int LiNbO3/int NbO3/int Al/int Li/int Nb/int O3/int Zr/int O/int LiNbO3/ss NbO3/ss Li/ss Nb/ss O3/ss O/ss Al/el Zr/el
中文摘要	To obtain both high power durability and fine-dimensional control in high-frequency surface acoustic wave devices, a highly oriented (111) texture was developed in electronic beam evaporated Al films on Zr underlayer. In this paper, the effects of Zr underlayer on the microstructure and resistivity of Al/Zr/LiNbO/sub 3/ films were investigated. The films show an extremely smooth surface. The optimum annealing temperature is 200 degrees C to obtain low resistivity. For Al films with Zr underlayer, reactive ion etching with gases containing BCl /sub 3/ can be more easily performed than that for Al films with Cu underlayer.
会议录出版者	Trans Tech Publications ; Switzerland
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/18241]
专题	清华大学
推荐引用方式 GB/T 7714	Li, D.M.,Pan, F.,Wang, X.B.,et al. Microstructure and electronic properties of Al/Zr/LiNbO/sub 3/ multilayers[C]. 见:Materials Science Forum, Fifth Pacific Rim International Conference on Advanced Materials and Processing PRICM-5, Beijing, China, INSPEC.

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