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	Analysis of effective spin-polarized transport through a ZnO based magnetic p-n junction at room temperature
	Zhang, Lei ; Deng, Ning ; Ren, Min ; Dong, Hao ; Chen, Peiyi
	2010-05-07 ; 2010-05-07
会议名称	SUPERLATTICES AND MICROSTRUCTURES ; Symposium on ZnO and Related Materials held at the 2006 EMRS Spring Meeting ; Nice, FRANCE ; Web of Science
关键词	spin-polarized injection ZnO p-n junction magnetic semiconductor room temperature SEMICONDUCTOR HETEROSTRUCTURE DOPED ZNO INJECTION MAGNETORESISTANCE FERROMAGNETISM Physics, Condensed Matter
中文摘要	ZnO based magnetic semiconductors (MSs) are prominent candidates for the spintromic devices because of their high Curie temperatures and low conductance mismatches. In this paper the spin-polarized transport in MS/nonmagnetic semiconductor (NMS) p-n junction is investigated. A model is established based on semiconductor drift-diffusion theory and continuity equation. Boundary conditions are obtained from the quasi-chemical potential (QCP) relations at the junction interface. For a ZnO based magnetic p-n junction, we calculate the distributions of carrier/spin density and spin polarization at room temperature. It is demonstrated that by choosing proper parameters, effective spin-polarized injection from ZnO based MS into ZnO can be achieved at room temperature without external spin-polarized injection (ESP]) or large bias. (c) 2007 Elsevier Ltd. All rights reserved.
会议录出版者	ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD ; LONDON ; 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16905]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, Lei,Deng, Ning,Ren, Min,et al. Analysis of effective spin-polarized transport through a ZnO based magnetic p-n junction at room temperature[C]. 见:SUPERLATTICES AND MICROSTRUCTURES, Symposium on ZnO and Related Materials held at the 2006 EMRS Spring Meeting, Nice, FRANCE, Web of Science.

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