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	A systematical approach for noise in CMOS LNA
	Feng Dong ; Shi Bingxue
	2010-05-07 ; 2010-05-07
关键词	Theoretical or Mathematical/ CMOS integrated circuits microwave amplifiers MIS devices semiconductor device noise/ CMOS low noise amplifier channel noise induced gate noise MOS devices noise figure gate resistance channel resistance noise performance noise optimization 5.2 GHz/ B2570D CMOS integrated circuits B1220 Amplifiers B2530F Metal-insulator-semiconductor structures B1350F Solid-state microwave circuits and devices B1350H Microwave integrated circuits/ frequency 5.2E+09 Hz
中文摘要	A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices. A new analytical formula for noise figure is proposed. Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed. Two kinds of noise optimization approaches are performed and applied to the design of a 5.2 GHz CMOS LNA.
语种	英语 ; 英语
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16641]
专题	清华大学
推荐引用方式 GB/T 7714	Feng Dong,Shi Bingxue. A systematical approach for noise in CMOS LNA[J],2010, 2010.
APA	Feng Dong,&Shi Bingxue.(2010).A systematical approach for noise in CMOS LNA..
MLA	Feng Dong,et al."A systematical approach for noise in CMOS LNA".(2010).

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