QQ客服 官方微博 反馈留言

	Imprint related fatigue behavior of Pt/SrBi/sub 2/Ta/sub 2 /O/sub 9//Pt capacitors
	Dan Xie ; Zhigang Zhang ; Tianling Ren ; Chaogang Wei ; Litian Liu
	2010-05-07 ; 2010-05-07
关键词	Experimental/ aggregation bismuth compounds dielectric polarisation electric domains electrodes fatigue ferroelectric capacitors ferroelectric switching MOCVD platinum strontium compounds thin film capacitors/ imprint fatigue ferroelectric capacitors metalorganic decomposition switchable polarization domains electrode interfaces defect charge aggregation pinning depth Pt-SrBi/sub 2/Ta/sub 2/O/sub 9// B2130 Capacitors B2860F Ferroelectric devices/ Pt-SrBi2Ta2O9/int SrBi2Ta2O9/int Bi2/int Ta2/int Bi/int O9/int Pt/int Sr/int Ta/int O/int SrBi2Ta2O9/ss Bi2/ss Ta2/ss Bi/ss O9/ss Sr/ss Ta/ss O/ss Pt/el
中文摘要	Pt/SrBi/sub 2/Ta/sub 2/O/sub 9/(SBT)/Pt ferroelectric capacitors with the film thickness of 300 nm were successfully fabricated using metalorganic decomposition (MOD) technique. The fatigue and imprint behaviors were studied. It is found that the switchable polarization of SBT capacitors had the increasing trend in the first stage, and after 2 * 10/sup 9/ switching cycles, the switchable polarization began to decrease. The domains in SBT thin films were weakly pinned by defect charges and they were easily depinned when applying an external field, which resulted in the increase of switchable polarization. Furthermore, the depinned defect charges moved to the electrode interfaces and aggregated there, then resulted in the polarization suppression at last. During the switching process, both the behavior of fatigue and imprint existed simultaneously. A competition relationship existed between the depinning behavior of domains and the aggregation of defect charges at the electrode interfaces. It was the competition that decided the fatigue characterization for SBT capacitors. The higher the external voltage, the more suppressed polarization could be recovered, which suggested that more domains in SBT thin films were easily depinned under a higher external field, and the pinning depth by defect charges was different.
语种	英语 ; 英语
出版者	Gordon & Breach ; Netherlands
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16618]
专题	清华大学
推荐引用方式 GB/T 7714	Dan Xie,Zhigang Zhang,Tianling Ren,et al. Imprint related fatigue behavior of Pt/SrBi/sub 2/Ta/sub 2 /O/sub 9//Pt capacitors[J],2010, 2010.
APA	Dan Xie,Zhigang Zhang,Tianling Ren,Chaogang Wei,&Litian Liu.(2010).Imprint related fatigue behavior of Pt/SrBi/sub 2/Ta/sub 2 /O/sub 9//Pt capacitors..
MLA	Dan Xie,et al."Imprint related fatigue behavior of Pt/SrBi/sub 2/Ta/sub 2 /O/sub 9//Pt capacitors".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。