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	Design of an EEPROM IP for RFID's
	Ji Kang-ling ; Liu Zhi-hong ; Zhu Jun ; Pan Li-yang ; Wu Dong ; Xiao Fang-xing
	2010-05-07 ; 2010-05-07
关键词	Practical/ CMOS memory circuits EPROM radiofrequency identification/ RFID EEPROM process EEPROM IP circuit circuit structure CMOS process radiofrequency identification 1.2 micron 1 kbit/ B1265D Memory circuits B2570D CMOS integrated circuits B6250Z Other radio links C5320G Semiconductor storage/ size 1.2E-06 m storage capacity 1.0E+03 bit
中文摘要	A 1.2 mu m EEPROM process for RFID is developed and a 1 kbit EEPROM IP circuit based on the process is designed. By modifying the circuit structure and optimizing the design, low voltage and low power have been achieved for the EEPROM IP, which can operate in a broad range of voltages. A 1. 2 mu m EEPROM technology compatible with CMOS process is developed to fabricate the circuit, which reduces the production cost. The EEPROM IP is applicable for RFIDs.
语种	中文 ; 中文
出版者	Editorial Dept. Microelectronics ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16575]
专题	清华大学
推荐引用方式 GB/T 7714	Ji Kang-ling,Liu Zhi-hong,Zhu Jun,et al. Design of an EEPROM IP for RFID's[J],2010, 2010.
APA	Ji Kang-ling,Liu Zhi-hong,Zhu Jun,Pan Li-yang,Wu Dong,&Xiao Fang-xing.(2010).Design of an EEPROM IP for RFID's..
MLA	Ji Kang-ling,et al."Design of an EEPROM IP for RFID's".(2010).

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