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	Investigation on high vacuum magnetron sputtered IrMn bottom spin valves
	Ouyang Ke-qing ; Ren Tian-ling ; Liu Hua-rui ; Qu Bing-jun ; Liu Li-tian ; Li Wei
	2010-05-07 ; 2010-05-07
关键词	Experimental/ annealing buffer layers coercive force giant magnetoresistance iridium alloys magnetic multilayers manganese alloys spin valves sputtered coatings/ bottom spin valves glass substrate high vacuum DC magnetron sputtering buffer layer bottom pinned structure thermal annealing effect GMR properties MR ratio coercivity exchange bias field structure parameters top structure 2 nm Ta-IrMn-CoFe-Cu-NiFe SiO/sub 2// A7570C Interfacial magnetic properties A7570P Enhanced magnetoresistance in magnetic films and multilayers A7550R Magnetism in interface structures A7560E Magnetization curves, hysteresis, Barkhausen and related effects A7360D Electrical properties of metals and metallic alloys (thin films/low-dimensional structures) A7215G Galvanomagnetic and other magnetotransport effects (metals/alloys) A8140G Other heat and thermomechanical treatments B3110M Magnetic multilayers B3120J Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices/ size 2.0E-09 m/ Ta-IrMn-CoFe-Cu-NiFe/int CoFe/int IrMn/int NiFe/int Co/int Cu/int Fe/int Ir/int Mn/int Ni/int Ta/int CoFe/bin IrMn/bin NiFe/bin Co/bin Fe/bin Ir/bin Mn/bin Ni/bin Cu/el Ta/el SiO2/sur O2/sur Si/sur O/sur SiO2/bin O2/bin Si/bin O/bin
中文摘要	The IrMn bottom spin valves, with structure of Ta/buffer layer/IrMn/CoFe/Cu/CoFe/NiFe/Ta, were deposited on glass substrate by high vacuum DC magnetron sputtering method. The effect of NiFe and Cu buffer layer was investigated, and an optimized thickness (2 nm) of buffer layer is proposed for the bottom pinned structure. The thermal annealing effect on the GMR properties in bottom pinned structure was discussed. The spin valves get high MR ratio (> 8.5%), low coercivity (< 0.8 Oe), and high exchange bias field (> 800 Oe) after the optimizing the structure parameters and annealing conditions. Spin valve with bottom structure is compared with which with top structure.
语种	英语 ; 英语
出版者	Editorial Board, J. Funct. Mater. Devices ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16422]
专题	清华大学
推荐引用方式 GB/T 7714	Ouyang Ke-qing,Ren Tian-ling,Liu Hua-rui,et al. Investigation on high vacuum magnetron sputtered IrMn bottom spin valves[J],2010, 2010.
APA	Ouyang Ke-qing,Ren Tian-ling,Liu Hua-rui,Qu Bing-jun,Liu Li-tian,&Li Wei.(2010).Investigation on high vacuum magnetron sputtered IrMn bottom spin valves..
MLA	Ouyang Ke-qing,et al."Investigation on high vacuum magnetron sputtered IrMn bottom spin valves".(2010).

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